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| 2MBI100SC-120 1200V / 100A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25C IC Tc=80C Tc=25C IC pulse Tc=80C -IC -IC pulse PC Tj Tstg Vis Mounting *2 Terminals *2 Rating 1200 20 150 100 300 200 100 200 780 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W C C V N*m N*m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. - - 2.0 - - 0.4 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 12000 - - 2500 - - 2200 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 Characteristics Min. Typ. - - - - - 0.05 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=100mA Tc=25 C VGE=15V, IC=100A Tc=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=15V RG=9.1 ohm Tj=25C Tj=125C IF=100A Conditions Max. 0.16 0.33 - IGBT Diode the base to cooling fin C/W C/W C/W IF=100A, VGE=0V Unit mA A V V pF s Turn-off time Forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Thermal resistance Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI100SC-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 250 250 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) VGE= 20V15V 12V 200 200 VGE= 20V15V 12V Collector current : Ic [ A ] 150 10V Collector current : Ic [ A ] 150 10V 100 100 50 50 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 250 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 200 Tj= 125C 150 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 Ic= 200A 2 Ic= 100A Ic=50A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 50000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 10000 5000 Cies 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 600 800 Gate charge : Qg [ nC ] 0 1000 Gate - Emitter voltage : VGE [ V ] 2MBI100SC-120 IGBT Module 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 9.1 ohm, Tj= 25C Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 9.1ohm, Tj= 125C 1000 toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 50 100 150 Collector current : Ic [ A ] 50 0 50 100 150 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=15V, Tj= 25C 5000 ton 30 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff 25 Switching time : ton, tr, toff, tf [ nsec ] tr 1000 Eon(125C) 20 Eon(25C) 15 Eoff(125C) 10 Eoff(25C) Err(125C) 5 Err(25C) 500 100 tf 50 1 10 Gate resistance : Rg [ohm] 100 300 0 0 50 100 Collector current : Ic [ A ] 150 200 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=15V, Tj= 125C 70 Eon 60 250 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>9.1ohm, Tj=<125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 50 Collector current : Ic [ A ] 300 40 150 30 100 20 Eoff 50 10 Err 0 1 10 Gate resistance : Rg [ohm] 0 100 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 2MBI100SC-120 Forward current vs. Forward on voltage (typ.) 250 500 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1ohm Tj=125C 200 Tj=25C 150 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Irr(125C) Forward current : IF [ A ] 100 trr(125C) Irr(25C) trr(25C) 100 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 150 Forward current : IF [ A ] Transient thermal resistance 1 FWD Thermal resistanse : Rth(j-c) [ C/W ] 0.1 0.05 IGBT 0.01 1E-3 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 240g |
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